图5. -5V负载关断，50mA负载
Ch1 = Q8BASE, Ch2 = -5VGATE, Ch3 = -5VOUT, Ch4 = IIN(-5V)
注释：虽然由于输出电容放电导致VOUT(-5V)没有达到0V，-5V在1ms内下降至零。
图6. -12V栅极关断，没有负载
Ch1 = Q8BASE, Ch2 = +3.3VGATE, Ch3 = +12VGATE, Ch4 = -12VGATE
注释：-12V栅极关断较慢；当1 < VGATE < 3V (2.5V，典型值)时，FET关断。由此，正电压通道关断1ms至4ms后，-12V栅极完全关断。
图7. -12V负载关断，150mA负载
Ch1 = Q8BASE, Ch2 = -12VGATE, Ch3 = -12VOUT, Ch4 = IIN(-12V)
注释：虽然由于输出电容放电导致VOUT(-12V)没有达到0V，-12V输入在4ms内降到零。
图8. -12V接通波形
Ch1 = Q8BASE, Ch2 = -12VGATE, Ch3 = -12VOUT, Ch4 = IIN(-12V)
注释：接通顺序，80Ω阻性负载 = 150mA。
图9. -12V接通波形，没有负载
Ch1 = Q8BASE, Ch2 = -12VGATE, Ch3 = -12VOUT, Ch4 = IIN(-12V)
注释：IIN(PK) = 80mA，对输出电容充电。
图10. -5V接通波形，100Ω阻性负载 = 50mA
Ch1 = Q8BASE, Ch2 = -5VGATE, Ch3 = -5VOUT, Ch4 = IIN(-5V)
注释：-5V摆率大约为1V/ms。
图11. -5V接通波形，没有负载
Ch1 = Q8BASE, Ch2 = -5VGATE, Ch3 = -5VOUT, Ch4 = IIN(-5V)
注释：IIN(PK) = 55mA，对输出电容充电。
图12. +3.3V接通波形，没有负载
Ch1 = Q8BASE, Ch2 = +3.3VGATE, Ch3 = +3.3VOUT, Ch4 = IIN(+3.3V)
注释：IIN(PK) = 400mA，对输出电容充电；+3.3V摆率大约为1V/ms。
图13. +3.3V接通波形，1.1Ω负载 = 3A
Ch1 = Q8BASE, Ch2 = +3.3VGATE, Ch3 = +3.3VOUT, Ch4 = IIN(+3.3V)
图14. +3.3V过流关断
Ch1 = STAT1, Ch2 = VGATE (+3.3V), Ch3 = +3.3VOUT, Ch4 = IOUT(+3.3V) 0.5A/div
注释：IOUT和VOUT减小是由于输出电容向恒阻负载放电。测得的触发电流为3.22A。*
图15. +5V接通负载电容充电电流，没有负载
Ch1 = Q8BASE, Ch2 = +5VGATE, Ch3 = +5VOUT, Ch4 = IIN(+5V)
注释：IIN(PK) = 500mA，对输出电容充电。
图16. +5V接通电流，2.083Ω负载 = 2.4A
Ch1 = Q8BASE, Ch2 = +5VGATE, Ch3 = +5VOUT, Ch4 = IIN(+5V)
图17. +5V过流关断
Ch1 = STAT2, Ch2 = VGATE (+5V), Ch3 = +5VOUT, Ch4 = IOUT(+5V) 0.5A/div
注释：IOUT和VOUT减小是由于输出电容向恒阻负载放电。测得的触发电流为2.87A。
图18. +12V启动电流，没有负载
Ch1 = Q8BASE, Ch2 = +12VGATE, Ch3 = +12VOUT, Ch4 = IIN(+12V)
注释：IIN(+12Vpk) = 500mA，对输出电容充电。
图19. +12V接通电流，4Ω负载 = 3A
Ch1 = Q8BASE, Ch2 = +12VGATE, Ch3 = +12VOUT, Ch4 = IIN(+12V)
图20. +12V过流关断
Ch1 = STAT3, Ch2 = VGATE (+12V), Ch3 = +12VOUT, Ch4 = IOUT(+3.3V) 0.5A/div
注释：IOUT和VOUT减小是由于输出电容向恒阻负载放电。测得的触发电流为3.1A。
图21. 短路电路的+5V启动电流
Ch1 = Q8BASE, Ch2 = +5VOUT, Ch3 = +5VGATE, Ch4 = IIN(+5V)
注释：触发时的4A负载电流。
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